%0 Journal Article
%T Finite element analysis on stress distribution in buried quantum dots<br>埋置量子点应力分布的有限元分析
%A Zhou Wang-Min
%A Cai Cheng-Yu
%A Wang Chong-Yu
%A Yin Shu-Yuan
%A <br>周旺民
%A 蔡承宇
%A 王崇愚
%A 尹姝媛
%J 物理学报
%D 2009
%I 
%X The stacked, self-assembled and vertically aligned quantum dot superlattices are fabricated by alternating growth of substrate and epitaxial materials, the stress/strain fields in the buried quantum dots can influence their optical and piezoelectric properties and mechanical stability. The distributions of stresses, strains, hydrostatic strains and biaxial strains in buried strain self-assembled Ge/Si semiconductor quantum dot are investigated based on the theory of anisotropy elasticity and also compared with those of free-standing quantum dot. The sameness and difference of the stresses/strains between the buried and the free-standing quantum dots, and the influence of cap layer on the stress/strain fields in quantum dots are given.
%K quantum dots
%K stress distribution
%K strain distribution<br>量子点，
%K 应力分布，
%K 应变分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B273376A6D1CC02CB3C9DE513D3314BC&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=5D311CA918CA9A03&sid=929B41514B808590&eid=F89B73C506203A51&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=0