%0 Journal Article
%T The study of defects in Ga0.946Mn0.054As by X-ray absorption spectra<br>X射线吸收谱对Ga0.946Mn0.054As薄膜中缺陷的研究
%A Qiao Yuan-Yuan
%A Xiao Zheng-Guo
%A Cao Xian-Cun
%A Guo Hao-Min
%A Shi Tong-Fei
%A Wang Yu-Qi
%A <br>乔媛媛
%A 肖正国
%A 曹先存
%A 郭浩民
%A 史同飞
%A 王玉琦
%J 物理学报
%D 2011
%I 
%X 采用低温分子束外延法(LT-MBE)制备出Ga0.946Mn0.054As稀磁半导体(DMS)薄膜.通过X射线吸收谱(XAS)研究影响Ga0.946Mn0.054As薄膜性质的主要缺陷Mn间隙原子(MnI)和As反位原子(AsGa).实验结果表明,在较低生长温度(TS=200℃)下Ga0.946Mn0.054
%K Ga0
%K 946Mn0
%K 054As diluted magnetic semiconductor
%K X-ray absorption spectra
%K As antisites
%K Mn interstitials<br>Ga0.946Mn0.054As稀磁半导体
%K X射线吸收谱
%K As反位缺陷
%K Mn间隙原子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=070AD09DBF86671C78B1EFA08C09A7EC&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=CA4FD0336C81A37A&sid=7CD1E4CCE758F3DC&eid=7CD1E4CCE758F3DC&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17