%0 Journal Article
%T Influence of n-type layer structure on performance and light-induced degradation of n-i-p microcrystalline silicon solar cells<br>n型掺杂层结构对n-i-P型微晶硅电池性能和光致衰退特性的影响
%A Lu Peng
%A Hou Guo-Fu
%A Yuan Yu-Jie
%A Yang Rui-Xia
%A Zhao Ying
%A <br>卢鹏
%A 侯国付
%A 袁育杰
%A 杨瑞霞
%A 赵颖
%J 物理学报
%D 2010
%I 
%X A series of n-i-p microcrystalline silicon thin film solar cells with different values of crystalline volume fraction Xc of n-type layers are prepared by radio frequency plasma enhanced chemical vapor deposition. It is found that the structure of intrinsic layer is strongly dependent on the structure of n-type layer, especially the incubation layer thickness at n/i interface and Xc of intrinsic layer. This series of solar cells were light-soaked under 100 mW/cm2 for 400 h. The experiment results demonstrate that the solar cell with the highest Xc of intrinsic layer (Xc(i)=65%) has the lowest light-induced degradation ratio. Then the solar cell with n-type layer deposited in an amorphous silicon/microcrystalline silicon transition region (Xc(i) =54%) is light-soaked under the irradiations of white light, red light and blue light with the same light intensities, separately. After 400 h light-soaking, the light degradation ratio is only 2% for the red light irradiation, while it is 8% for the blue light irradiation.
%K microcrystalline silicon
%K n-i-p solar cells
%K light-induced degradation
%K crystalline volume fraction<br>微晶硅
%K n-i-p结构太阳电池
%K 光致衰退
%K 晶化率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=CB9ACAE428C91B7C238D8CC8815E7ECC&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=B31275AF3241DB2D&sid=0482EC3EFF6A7CA7&eid=3AFA2687CF2ACC82&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=11