%0 Journal Article
%T High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors<br>增强型AlGaN/GaN高电子迁移率晶体管高温退火研究
%A Wang Chong
%A Quan Si
%A Ma Xiao-Hu
%A Hao Yue
%A Zhang Jin-Cheng
%A Mao Wei
%A <br>王冲
%A 全思
%A 马晓华
%A 郝跃
%A 张进城
%A 毛维
%J 物理学报
%D 2010
%I 
%X 深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N2中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N2中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒
%K high electron mobility transistor
%K AlGaN/GaN
%K enhancement-mode device<br>高电子迁移率晶体管
%K AlGaN/GaN
%K 增强型器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=80452DB33A17937104090C175CE25DB5&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=F3090AE9B60B7ED1&sid=FD51E72633272501&eid=532B3D936FF4D38B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12