%0 Journal Article
%T The study on the electronic structure and optical properties of OsSi_2<br>OsSi_2电子结构和光学性质的研究
%A Li Xu-Zhen
%A Xie Quan
%A Chen Qian
%A Zhao Feng-Juan
%A Cui Dong-Meng
%A <br>李旭珍
%A 谢泉
%A 陈茜
%A 赵凤娟
%A 崔冬萌
%J 物理学报
%D 2010
%I 
%X Electronic structure,densities of states and optical properties of orthorhombic OsSi_2 was calculated by the first-principle density function theory pseudopotential method.The calculated results show that OsSi_2 is an indirect semiconductor with the band gap of 0.813 eV,the valence bands of OsSi_2 are mainly composed of Os 5d and Si 3p,the conduction bands are mainly composed of Si 3p,3s as well as Os 5d.The stastic dielectric function ε_1(0)is 15.43,the reflectivity n_0 is 3.93.Furthermore,the dielectric functions,refractivity index,reflectivity,absorption,conductivity and loss function of OsSi_2 are analyzed in terms of the calculated band structure and densities of states.The results offer theoretical data for the design and application of OsSi_2.
%K OsSi2
%K first-principles
%K electronic structure
%K optical properties<br>OsSi2
%K 第一性原理
%K 电子结构
%K 光学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=05B03FD13E682ED606EFEB1D2C5F696A&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=38B194292C032A66&sid=9F915C6F01DE79C5&eid=9475FABC7A03F4AB&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=14