%0 Journal Article
%T Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy<br>AlGaN插入层对6H-SiC上金属有机物气相外延生长的GaN薄膜残余应力及表面形貌的影响
%A Jiang Yang
%A Luo Yi
%A Xi Guang-Yi
%A Wang Lai
%A Li Hong-Tao
%A Zhao Wei
%A Han Yan-Jun
%A <br>江洋
%A 罗毅
%A 席光义
%A 汪莱
%A 李洪涛
%A 赵维
%A 韩彦军
%J 物理学报
%D 2009
%I 
%X GaN layers with AlGaN intermediate layers of different Al mole fraction steps were grown on 6H-SiC by metal organic vapour phase epitaxy system. The residual stress and surface morphology of these samples were compared with GaN/AlN/SiC structure in detail. High resolution X-ray diffraction indicates that the c-axis constant increases with the increasing number of AlGaN steps, while low-temperature photoluminescence measurement shows a blue-shift of the GaN peak. These results should be attributed to the decreased residual stress in GaN. Furthermore, surface morphology of samples with AlGaN intermediate layers is improved according to the results of atomic force microscope.
%K residual stress
%K surface morphology
%K SiC substrate
%K AlGaN intermediate layer<br>残余应力，
%K 表面形貌，
%K SiC衬底，
%K AlGaN插入层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=FA7419A97E147955E659DFF1AA7D7305&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=F3090AE9B60B7ED1&sid=60A6B2011B2AD0AA&eid=60EBEF7B2B9A8BDC&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0