%0 Journal Article
%T Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution<br>溶液法铝诱导晶化制备多晶硅薄膜
%A Luo Chong
%A Meng Zhi-Guo
%A Wang Shuo
%A Xiong Shao-Zhen
%A <br>罗翀
%A 孟志国
%A 王烁
%A 熊绍珍
%J 物理学报
%D 2009
%I 
%X A new method to prepare polycrystalline silicon thin film from a-Si thin films using aluminate solution as induced source was introduced in this article. According to the analysis using optical microscope and Raman spectrum, it was indicated that the a-Si thin film could successfully be crystallized in certain Al-salt solutions. Using the X-ray photoelectron spectroscopy explored by shelling the samples into several sub-layers, the possible chemical reaction between the surface of silicon and aluminate solution was found and the continuous layer exchange process was confirmed. In the end, the mechanism of solution-based aluminum-induced crystallization was discussed.
%K aluminum-induced crystallization
%K polycrystalline silicon thin films
%K solution-based method<br>铝诱导晶化，
%K 多晶硅薄膜，
%K 溶液法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=99C3E9CC46CAB228FA3629D3532A735F&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=9CF7A0430CBB2DFD&sid=9C612F7BD3D92A31&eid=EED5B689BBF1600F&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=0