%0 Journal Article
%T Research on prediction model of radiation effect for complementary metal oxide semiconductor devices at low dose rate irradiation in space environment<br>互补金属氧化物半导体器件空间低剂量率辐射效应预估模型研究
%A He Bao-Ping
%A Yao Zhi-Bin
%A <br>何宝平
%A 姚志斌
%J 物理学报
%D 2010
%I 
%X A new model is presented to predict the radiation response for complementary metal oxide semiconductor (CMOS)devices at low dose rate in space environment. In comparison with the linear system response theory model, the prediction results for CMOS devices at low dose rate radiation by using the new model are more close to actually experiment data, and the experimental results for different dose rate of radiation verify the accuracy of the model. Finally, the radiation effects on sensitive parameters of CMOS...
%K ionizing radiation
%K total dose
%K low dose rate
%K prediction method<br>电离辐射
%K 总剂量
%K 低剂量率
%K 预估方法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=94422E7D4617254DA4AC7D39FC52DAA2&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=38B194292C032A66&sid=74E41645C164CD61&eid=8D39DA2CB9F38FD0&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12