%0 Journal Article
%T Light intensity distribution in laser interference crystallization and the fabrication of two-dimensional periodic nanocrystalline silicon array<br>二维移相光栅光强分布的计算及在制备有序纳米硅阵列中的应用
%A Yan Min-Yi
%A Wang Dan-Qing
%A Ma Zhong-Yuan
%A Yao Yao
%A Liu Guang-Yuan
%A Li Wei
%A Huang Xin-Fan
%A Chen Kun-Ji
%A Xu Jun
%A Xu Ling
%A <br>严敏逸
%A 王旦清
%A 马忠元
%A 姚尧
%A 刘广元
%A 李伟
%A 黄信凡
%A 陈坤基
%A 徐骏
%A 徐岭
%J 物理学报
%D 2010
%I 
%X Based on the general form of Fresnel diffraction,light intensity distribution in laser interference crystallization with a phase shifting grating mask (PSGM) was calculated.Two-dimensional (2D) periodic nanocrystalline silicon (nc-Si) array was fabricated by laser interference crystallization combined with 2D-PSGM.The light intensity irradiated on the surface of a-Si:H samples can be modulated by the PSGM with the periodicity of 400 nm.Experimental results demonstrate that the periodicity of 2D nc-Si array is the same as that of the PSGM,the crystalline regions of nc-Si array are consistant with the simulated results.
%K nanocrystalline silicon
%K laser interference crystallization
%K phase shifting grating
%K fresnel diffraction<br>纳米硅，激光干涉晶化，移相光栅，菲涅耳衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=50B193903B768D97DE811B0C5F6E0A4C&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=94C357A881DFC066&sid=69B79AFFE576C0B3&eid=66F80A3DB26BCFE3&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=10