%0 Journal Article
%T Progress in rare earth doped Hf-based high-k gate dielectrics<br>稀土元素掺杂的Hf基栅介质材料研究进展
%A Zheng Xiao-Hu
%A Huang An-Ping
%A Yang Zhi-Chao
%A Xiao Zhi-Song
%A Wang Mei
%A Cheng Guo-An
%A <br>郑晓虎
%A 黄安平
%A 杨智超
%A 肖志松
%A 王玫
%A 程国安
%J 物理学报
%D 2011
%I 
%X As the scaling of MOSFETs continues towards 45 nm technology node, it is inevitable that Hf-based high-k materials replace the traditional SiO2 as the gate dielectrics of MOSFETs. But there are still many issues to be settled. Rare earth doping can increase the k value of dielectrics, decrease the defect densities of dielectrics and modulate the threshold voltage shift of MOSFETs. This paper reviews recent progress, the challenge of Hf-based high-k materials, the influence of rare earth doping on Hf-based high-k materials and its future trend.
%K Hf-based high-k gate dielectrics
%K rare earth doping
%K oxygen vacancies
%K effective work function<br>Hf基高k栅介质
%K 稀土掺杂
%K 氧空位缺陷
%K 有效功函数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=06B91BD62807C4047A2782E67DE7DCE6&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=CA4FD0336C81A37A&sid=621EC5FEE2B005AA&eid=621EC5FEE2B005AA&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=63