%0 Journal Article
%T N-type window layer and its application in high deposition rate microcrystalline silicon solar cells<br>n型窗口层材料及其在高速沉积微晶硅太阳电池中的应用研究
%A Zhang Xiao-Dan
%A Zhao Ying
%A Sun Fu-He
%A Wang Shi-Feng
%A Han Xiao-Yan
%A Wei Chang-Chun
%A Sun Jian
%A Geng Xin-Hua
%A Xiong Shao-Zhen
%A <br>张晓丹
%A 赵颖
%A 孙福和
%A 王世锋
%A 韩晓艳
%A 魏长春
%A 孙建
%A 耿新华
%A 熊绍珍
%J 物理学报
%D 2009
%I 
%X N-type phosphors doping layer as the window layer of microcrystalline silicon solar cells has been fabricated using conversional radio frequency plasma enhanced chemical vapor deposition. Because of hole and electron mobilities are of the same order for microcrystalline silicon thin film, microcrystalline silicon solar cells based on n-type doping layer as the window layer almost show the same efficiency as microcrystalline silicon solar cells based on p-type doping layer as the window layer. In addition, the results of quantum efficiency are also consistent with the I-V measurement results. Bilateral Raman measurement results using laser light of different wavelength indicated that p/i or n/i interface incubation layer has a disadvantageous influence on the current density of the solar cells. Through the optimization of n/i interface incubation layer, glass/ZnO/n/i/p/Al microcrystalline silicon solar cell with 7.7% conversion efficiency has been fabricated.
%K n-type doping window layer
%K p-type doping window layer
%K microcrystalline silicon solar cells<br>n型的掺杂窗口层
%K p型的掺杂窗口层
%K 微晶硅薄膜太阳电池
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2B67614CB360B2411ACFE0FB9F42431A&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=DF92D298D3FF1E6E&sid=F6EB8EC2836573CC&eid=CA5C11DD3EF0B32A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0