%0 Journal Article
%T Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope<br>Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究
%A Qiu Yun-Fei
%A Du Wen-Han
%A Wang Bing
%A <br>邱云飞
%A 杜文汉
%A 王兵
%J 物理学报
%D 2011
%I 
%X 本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO3薄膜的初始生长过程.经660℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi2和C54-TiSi2.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO3薄膜与Si衬底之间的相互作用.
%K pulsed laser deposition (PLD)
%K scanning tunneling microscope (STM)
%K SrTiO3
%K C54-TiSi2<br>脉冲激光沉积术(PLD)
%K 扫描隧道显微镜(STM)
%K SrTiO3
%K C54-TiSi2
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2D06ED142125058FD4A2547525DDAE9E&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=38B194292C032A66&sid=03F8E7C20FA01501&eid=51F9E747BA1ACB45&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=36