%0 Journal Article
%T Improved properties of light emitting diode by rough p-GaN grown at lower temperature<br>p型GaN低温粗化提高发光二极管特性
%A Xing Yan-Hui
%A Han Jun
%A Deng Jun
%A Li Jian-Jun
%A Xu Chen
%A Shen Guang-Di
%A <br>邢艳辉
%A 韩军
%A 邓军
%A 李建军
%A 徐晨
%A 沈光地
%J 物理学报
%D 2010
%I 
%X GaN: Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN : Mg materials were studied.When the molar ratio of CP_2 Mg and TMGa is between 1.4 × 10~(-3)and 2.5 × 10~(-3), the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly.When the molar ratio is 2.5×10~(-3), the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser.Taking the p-GaN layer with molar ratio of CP_2 Mg and TMGa of 2.5×10~(-3) as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.
%K GaN
%K metal-organic chemical vapor deposition
%K atomic force microscopy
%K double crystal X-ray diffraction<br>氮化镓，
%K 金属有机物化学气相沉积，
%K 原子力显微镜
%K X射线双晶衍射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=A7CE8C064166A5A4DE63095819349E6C&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=0B39A22176CE99FB&sid=603BC00D7DC5FEAC&eid=83BD01456E8187CE&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0