%0 Journal Article
%T Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer<br>基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性
%A Huang Rui
%A Wang Dan-Qing
%A Song Jie
%A Ding Hong-Lin
%A Wang Xiang
%A Guo Yan-Qing
%A Chen Kun-Ji
%A Xu Jun
%A Li Wei
%A Ma Zhong-Yuan
%A <br>黄锐
%A 王旦清
%A 宋捷
%A 丁宏林
%A 王祥
%A 郭艳青
%A 陈坤基
%A 徐骏
%A 李伟
%A 马忠元
%J 物理学报
%D 2010
%I 
%X SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.
%K silicon nitride
%K multilayer
%K constrained crystallization
%K Si nanocrystals<br>氮化硅
%K 多层膜
%K 限制结晶
%K 纳米晶硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=AC17A0D962F7CFE5CC73F15D63B74F34&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=5D311CA918CA9A03&sid=EDC93E6F2EB57056&eid=6B5D30DD2B0C8DB4&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=9