%0 Journal Article
%T Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor<br>小尺寸应变Si金属氧化物半导体场效应晶体管栅隧穿电流预测模型
%A Wu Tie-Feng
%A Zhang He-Ming
%A Wang Guan-Yu
%A Hu Hui-Yong
%A <br>吴铁峰
%A 张鹤鸣
%A 王冠宇
%A 胡辉勇
%J 物理学报
%D 2011
%I 
%X For scaled metal-oxide semiconductor field effect transistor (MOSFET) devices, normal operation is seriously affected by the static gate tunneling leakage current due to the ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impact of gate leakage current on performance of novel strained Si device, a theoretical gate tunneling current predicting model by integral approach following the analysis of quasi-two-dimensional surface potential is presented in this study. On the basis of theoretical model, performance of MOSFET device was quantitatively studied in detail using ISE simulator, including different gate voltages and gate oxide thickness. The experiments show that simulation results agree well with theoretical analysis, and the theory and experimental data will contribute to future VLSI circuit design.
%K strained Si
%K quasi-two-dimensional surface potential
%K gate tunneling current
%K predicting model<br>应变硅
%K 准二维表面势
%K 栅隧穿电流
%K 预测模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=63557F6E222973D7CBC4A03C10C1A867&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=0B39A22176CE99FB&sid=A2C11A66AC922198&eid=A2C11A66AC922198&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=18