%0 Journal Article
%T Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer<br>含有本征SiGe层的SiGe异质结双极晶体管集电结耗尽层宽度模型
%A Hu Hui-Yong
%A Shu Yu
%A Zhang He-Ming
%A Song Jian-Jun
%A Xuan Rong-Xi
%A Qing Shan-Shan
%A Qu Jiang-Tao
%A <br>胡辉勇
%A 舒钰
%A 张鹤鸣
%A 宋建军
%A 宣荣喜
%A 秦珊珊
%A 屈江涛
%J 物理学报
%D 2011
%I 
%X By solving Poisson equation, models of voltage and electric field distribution are build respectively in collector junction depletion layer of SiGe HBT (heterojunction bipolar transistor) with intrinsic SiGe layer. On this basis, models of the collector junction depletion layer width and delay time are obtained. Applying MATLAB, the impact of physical and electrical parameters on SiGe HBT collector junction depletion layer width and depletion delay time are quantitatively analyzed. When base doping concentration and collector junction reverse bias are large, the depletion delay time is quite long. But, when base doping external diffusion depth and collector region doping are large, the depletion delay time is quite short.
%K SiGe HBT(heterojunction bipolar transistor)
%K collector depletion-layer
%K delay time<br>SiGe
%K HBT
%K 集电结耗尽层
%K 延迟时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=416DD20CA7F9FF41CB83868C8007D473&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=CA4FD0336C81A37A&sid=AD7BD84C651E42AD&eid=AD7BD84C651E42AD&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=12