%0 Journal Article
%T Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure<br>肖特基势垒对铁磁/有机半导体结构自旋注入性质的影响
%A Xiu Ming-Xi
%A Ren Jun-Feng
%A Wang Yu-Mei
%A Yuan Xiao-Bo
%A Hu Gui-Chao
%A <br>修明霞
%A 任俊峰
%A 王玉梅
%A 原晓波
%A 胡贵超
%J 物理学报
%D 2010
%I 
%X Theoretically we have studied the current spin polarization in the structure of ferromagnetic/organic semiconductor under Schottky contact and discussed its variations with potential barrier height, the special carriers in organic semiconductor layer and the its mobilities, doping concentration near the interface. The calculations show that the high mobilities of the carriers in organic semiconductors are conducive to the spin injection. We also find that a significant depletion region at Schottky contact is highly undesirable for spin injection. For an efficient spin injection, the depletion region near the interface should be heavily doped and the effective barrier height should be restricted wichin certain range.
%K organic spin injection
%K Schottky barrier
%K current spin polarization<br>有机自旋注入
%K 肖特基势垒
%K 电流自旋极化率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=60A40890D93C4CFB6176DD3DC4077C0C&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=59906B3B2830C2C5&sid=77CA8F45B5B644B9&eid=1E12736AE49CE4F1&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=23