%0 Journal Article
%T Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer<br>掺杂GaN间隔层对双波长发光二极管光谱调控作用的研究
%A Zhang Yun-Yan
%A Fan Guang-Han
%A Zhang Yong
%A Zheng Shu-Wen
%A <br>张运炎
%A 范广涵
%A 章勇
%A 郑树文
%J 物理学报
%D 2011
%I 
%X A two-dimensional simulation of electrical and optical characteristics of dual-wavelength LED (light-emitting diode) with doped GaN interval layer is conducted with software.It shows that by the use of doped GaN interval layer, we can solve the luminescence intensity disparity of the two kinds of quantum wells in dual-wavelength LED. And through control of the thickness of the interval layer, we can adjust the relative luminescence intensity of the two kinds of quantum wells. Therefore, the effect of spectrum-control in dual-wavelength LED is due to the blocking effect of holes or electrons by doped GaN interval layer.
%K GaN
%K interval layer
%K numerical simulation
%K dual-wavelength light-emitting diode<br>GaN
%K 间隔层
%K 数值模拟
%K 双波长发光二极管
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4715E2352FF9ACC3675DC8EA4510241F&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=0B39A22176CE99FB&sid=0AEA2B3143710B0B&eid=0AEA2B3143710B0B&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=15