%0 Journal Article
%T Quantum efficiency recovery of reflection-mode NEA GaN photocathode<br>反射式NEA GaN光电阴极量子效率恢复研究
%A Qiao Jian-Liang
%A Chang Ben-Kang
%A Qian Yun-Sheng
%A Du Xiao-Qing
%A Wang Xiao-Hui
%A Guo Xiang-Yang
%A <br>乔建良
%A 常本康
%A 钱芸生
%A 杜晓晴
%A 王晓晖
%A 郭向阳
%J 物理学报
%D 2011
%I 
%X In order to investigate the decay tendency and the recovery status of the quantum efficiency of reflection-mode NEA GaN photocathode, the quantum efficiency curves have been studied after the photocathode was fully activated, stored in system and supplemented with Cs. The quantum efficiency decay and recovery processes of reflection-mode NEA GaN photocathode were observed and the mechanism was discussed. The quantum efficiency value of reflection-mode NEA GaN photocathode can be recovered up to more than 94% of the best value in the shortwave region between 240nm and 300nm, and more than 88% in the long wave region between 300nm and 375nm after Cs supplement. Based on the changes of surface potential barrier profiles of the reflection-mode NEA GaN photocathode before and after the quantum efficiency degradation and the quantum yield formula, the decay characteristic and the recovery status of quantum efficiency curve after supplement with Cs have been related to the changes of surface barrier shapes.
%K reflection-mode
%K NEA
%K GaN photocathode
%K quantum efficiency<br>反射式
%K NEA
%K GaN光电阴极
%K 量子效率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=9376E6265242F5AC77620E180C5878CA&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=CA4FD0336C81A37A&sid=FEBB7F7C9C20995D&eid=FEBB7F7C9C20995D&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=17