%0 Journal Article
%T Degradation model of GaAs vacuum electron sources<br>GaAs真空电子源衰减模型研究
%A Zou Ji-Jun
%A Zhang Yi-Jun
%A Yang Zhi
%A Chang Ben-Kang
%A <br>邹继军
%A 张益军
%A 杨智
%A 常本康
%J 物理学报
%D 2011
%I 
%X The degradation of activated GaAs vacuum electron source as a function of time has been investigated by using X-ray photoelectron spectroscopy (XPS).We found that the cathode surface element content changes with time and the significant decrease in sensitivity of electron source is mainly due to the change of dipole direction caused by the adsorption of harmful gases on the cathode surface.Based on the above results,we deduced the degradation model of GaAs electron source through analyzing the adsorption process of harmful gases on the surface in vacuum system.The model reveals the exponential degradation rule of GaAs electron sources and the inverse relationship between lifetime and pressure.The theoretical results are in full agreement with the experimental fact.
%K electron source
%K X-ray photoelectron spectroscopy
%K degradation model
%K pressure<br>电子源
%K X射线光电子能谱
%K 衰减模型
%K 真空度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=6A5962FAD4E9ACF715C12EA40297A6CE&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=CA4FD0336C81A37A&sid=BA519EF45CDD98DD&eid=BA519EF45CDD98DD&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=19