%0 Journal Article
%T Electronic transport properties of the multilayer structure double spin-filter tunnel junction<br>多层结构双自旋过滤隧道结中的电子输运特性
%A Jin Lian
%A Zhu Lin
%A Li Ling
%A Xie Zheng-Wei
%A <br>金莲
%A 朱林
%A 李玲
%A 谢征微
%J 物理学报
%D 2009
%I 
%X Based on the transfer matrix method and the quantum coherent transport theory of Mireles and Kirczenow, the effects of the Rashba spin-orbit coupling and the spin-filter on the electronic transport properties in the NM/FS1/I/FS2/NM(NM represents the nonmagnetic metal layer, I represents the nonmagnetic insulator layer, and FS represents the magnetic semiconductor layer) double spin-filter tunnel junction are investigated. The influence of thickness of insulator layer and magnetic semiconductor layer on the tunnel magnetoresistance (TMR) and conductance are studied for different Rashba spin-orbit coupling strength and the different angle θ between the two magnetic moments of the left and right magnetic semiconductor layer. The results indicate that: in the presence of the spin-filter effect and the Rashba spin-orbit coupling interaction in the magnetic semiconductor layer, large TMR can be obtained in this double spin-filter junction. With the strength of Rashba spin-orbit coupling increasing, the tunnel magnetoresistance and conductance exhibit rapidly oscillating behavior and the oscillation period decreases gradually.
%K double spin-filter tunnel junction
%K Rashba spin-orbit coupling
%K tunnel magnetoresistance
%K transmission conductance<br>双自旋过滤隧道结，
%K Rashba自旋轨道耦合，
%K 隧穿磁电阻，
%K 隧穿电导
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5E1B61AA6DDE7D43BD991CA6CD30E0FC&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=59906B3B2830C2C5&sid=6018A2C60871B153&eid=634A0F64621E3696&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0