%0 Journal Article
%T Influence of annealing on the properties of Mn and N co-doped Zn0.88Mn0.12O:N films<br>退火对Mn和N共掺杂的Zn0.88Mn0.12O:N薄膜特性的影响
%A Qiu Dong-Jiang
%A Wang Jun
%A Ding Kou-Bao
%A Shi Hong-Jun
%A Jia Yin
%A <br>邱东江
%A 王 俊
%A 丁扣宝
%A 施红军
%A 郏 寅
%J 物理学报
%D 2008
%I 
%X 以NH3为掺N源，采用电子束反应蒸发技术生长了Mn和N共掺杂的Zn1-xMnxO:N薄膜，生长温度为300℃，然后在O2气氛中400℃退火0.5 h.X射线衍射测量表明，Zn0.88Mn0.12O(Mn掺杂)薄膜或Zn0.88Mn0.12O:N(Mn和N共掺杂)薄膜仍具有单一晶相纤锌矿结构，未检测到杂质相
%K ZnO thin film
%K Mn and N co-doping
%K electrical properties
%K magnetic properties<br>ZnO薄膜，
%K Mn和N共掺杂，
%K 电学特性，
%K 磁特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B732A77B86D54929A7D4740B671C901A&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=5D311CA918CA9A03&sid=D5C610C53E2AF98A&eid=254D8475C6B344B7&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0