%0 Journal Article
%T Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons<br>Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究
%A Zhang Lin
%A Xiao Jian
%A Qiu Yang-Zhang
%A Cheng Hong-Liang
%A <br>张林
%A 肖剑
%A 邱彦章
%A 程鸿亮
%J 物理学报
%D 2011
%I 
%X The Ti/4H-SiC Schottky barrier diodes(SBDs) were irradiated at room temperature with 60Co gamma-ray source, 1MeV electrons and neutrons, and 0V and -30 V bias voltage were applied to the diodes during gamma-ray and electron radiation. The meaurement results show that -30 V radiation bias voltage has no influence on the radiation effect of the diodes. After 1 Mrad(Si) gamma-ray and 1×1013 n/cm2neutron radiation respectively, the Schottky barrier height of the diodes basically remain the same values. After an electron dose of 3.43×1014 e/cm2, Schottky barrier height of the diodes slightly decreased, which was caused by ionizing damage of high energy electron, and recovered completely after annealing at room temperture. After gamma-ray and electron radiation, the reverse current of Ti/4H-SiC SBD had no obviously degration. The on-state resistance of the diodes increased after electron and neutron radiaiton.
%K silicon carbide
%K Schottky barrier diode
%K bias voltage
%K radiation effect<br>碳化硅
%K 肖特基
%K 辐照
%K 偏压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=0E0D16C392E579C52AAD67C0F828A35D&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=94C357A881DFC066&sid=379B0F94E65E6C6A&eid=811ACA5D3673A764&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=11