%0 Journal Article
%T Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation<br>(001)面任意方向单轴应变硅材料能带结构
%A Ma Jian-Li
%A Zhang He-Ming
%A Song Jian-Jun
%A Wang Guan-Yu
%A Wang Xiao-Yan
%A <br>马建立
%A 张鹤鸣
%A 宋建军
%A 王冠宇
%A 王晓艳
%J 物理学报
%D 2011
%I 
%X The strain tensor arising from uniaxial stress along an arbitrary direction on the (001) surface of Si is calculated. With these uniaxial strain tensor, the band structure of silicon material under arbitrary uniaxial stress on the (001) surface is calculated using K ·P perturbation theory coupled with linear deformation potential theory. The relation between energy band structure and stress parameters (type, direction, magnitude) was obtained. Finally, the uniaxial stress induced band structure change, such as that of the conduction band (CB) and the valence band (VB) edge levels, CB and VB splitting energy and the bandgap is demonstrated. Results of these band structure can be used as a guide for the design and the selection of the optimum strain and crystal orientation configuration of uniaxial strained silicon devices.
%K 单轴应变硅
%K K
%K ·P法
%K 能带结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=B46E75B418A9F25BD089AA7FE1881E60&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=0B39A22176CE99FB&sid=CC92C7A7E2B3204D&eid=CC92C7A7E2B3204D&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=14