%0 Journal Article
%T Study on mechanism of AIGaN/GaN high electron mobility transistors by high temperature Schottky annealing<br>AlGaN/GaN高电子迁移率晶体管肖特基高温退火机理研究
%A Lin Ruo-Bing
%A Wang Xin-Juan
%A Feng Qian
%A Wang Chong
%A Zhang Jin-Cheng
%A Hao Yue
%A <br>林若兵
%A 王欣娟
%A 冯倩
%A 王冲
%A 张进城
%A 郝跃
%J 物理学报
%D 2008
%I 
%X Under different stress, the current collapse, gate current leakage and breakdown voltages of AlGaN/GaN high electron mobility transistors change before and after high temperature annealing. The results show that characteristics of devices are greatly improved for AlGaN/GaN high electron mobility transistor after Schottky high temperature annealing. Interface of Schottky contacts is studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) before and after high temperature annealing. The analysis indicates that eliminating the medium between Ni and AlGaN and reducing of traps near the surface of AlGaN can improve the effective Schottky barrier, which can enhance the electric characteristics of the devices.
%K AlGaN/GaN high electron mobility transistors
%K Schottky contact
%K interface traps<br>AlGaN/GaN高电子迁移率晶体管，
%K 肖特基接触，
%K 界面陷阱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3E7938F9D10F72B429FEEDB7B19D2232&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=DF92D298D3FF1E6E&sid=4D5D20DEE81B61BC&eid=36F9D899819DD5C2&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=9