%0 Journal Article
%T Study of GaN/SiC contact using slow positron beam<br>GaN/SiC异质结的慢正电子研究
%A Wang Hai-Yun
%A Weng Hui-Min
%A CCLing
%A <br>王海云
%A 翁惠民
%A C.C.Ling
%J 物理学报
%D 2008
%I 
%X Using a slow positron beam and the program VEPFIT, we found there exists a barrier in the interface between GaN and SiC, which is caused by lots of band-like defects existing in it. The existence of the barrier induced two backing electric fields in diverse directions close to the interface. These fields can produce a longer diffusion length in the SiC region where no field exists compared with that of SiC region, which has an electric field at a set value. The fitted value of the electric field offers a good reference for studying the situation in a real the interface.
%K positron annihilation
%K defect
%K semiconductor<br>正电子湮没
%K 缺陷
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4FFA31C00C36FB5B4C4E57A7FD545AD7&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=9CF7A0430CBB2DFD&sid=F2D8CC92D8BBD54C&eid=F449E41C1253767D&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0