%0 Journal Article
%T Study of the dipole characteristic of terahertz wave emitted from photoconductor switches<br>光电导开关产生太赫兹电磁波双极特性分析
%A Jia Wan-Li
%A Shi Wei
%A Ji Wei-Li
%A Ma De-Ming
%A <br>贾婉丽
%A 施卫
%A 纪卫莉
%A 马德明
%J 物理学报
%D 2007
%I 
%X In this paper,different methods are used to simulate the dipole characteristic of terahertz(THz)wave emitted from low-temperature grown GaAs(LT-GaAs)and Semi-insulting GaAs(SI-GaAs)photoconductive semiconductor switches.The results indicate that the main cause of the dipole characteristic of THz wave emitted from LT-GaAs is the lifetime of optical-generated carriers being shorted than the generation time.For SI-GaAs photoconductive semiconductor switches with lifetime of optical-generated carriers longer than 100ps,the dipole characteristic of THz waveforms is mainly caused by intra-valley scattering and space charge field screening under different experimental conditions(different bias field and different optical pulse energy).
%K photoconductive switche
%K terahertz wave
%K carrier lifetime
%K space-charge screening<br>光电导开关
%K THz电磁波
%K 载流子寿命
%K 空间电荷屏蔽
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=F3A06C61863F23E8&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=DF92D298D3FF1E6E&sid=BA5354E88BC0A1C9&eid=0429D7232470A41A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=26