%0 Journal Article
%T Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence<br>正电子湮没谱和光致发光谱研究掺锌GaSb质子辐照缺陷
%A Zhou Kai
%A Li Hui
%A Wang Zhu
%A <br>周凯
%A 李辉
%A 王柱
%J 物理学报
%D 2010
%I 
%X Positron annihilation spectroscopy(PAS)and photoluminescence (PL) have been adopted to study defects in proton-irradiatied Zn-doped GaSb. A monovacancy VGa having a lifetime of 293 ps was observed in the non-irradiated sampls and a divacancy VGaVSb with a tifetime of 333 ps was identified in the proton-irradiated samples when the fluence reached 3×1015 cm-2.The PL results reveal that the acceptor Zn is not related with proton irradiation-induced defects, which act as non-radiation recombination centers in the samples. The acceptor level of Zn in GaSb has been calculated from the PL spectra. After proton irradiation, interstitial monatomic hydrogen in a negative charge state (Hi-) in GaSb has been found, which acts as a shallow-acceptor. Annealing experiments indicated that the as-grown and proton-irradiated samples have different annealing behaviors, the reason for which was attributed to the existence of monatomic hydrogen interstitials in the proton-irradiated samples.
%K defect
%K GaSb
%K positron annihilation
%K photoluminescence<br>缺陷
%K GaSb
%K 正电子湮没
%K 光致发光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=99D9C1D917C46DCD0B27127BFF3D6CB5&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=DF92D298D3FF1E6E&sid=265565C57BEE6304&eid=86D52E2064047D20&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20