%0 Journal Article
%T Molecular dynamics simulations of pulsed laser crystallization of amorphous silicon ultrathin films<br>脉冲激光晶化超薄非晶硅膜的分子动力学研究
%A Chen Gu-Ran
%A Song Chao
%A Xu Jun
%A Wang Dan-Qing
%A Xu Ling
%A Ma Zhong-Yuan
%A Li Wei
%A Huang Xin-Fan
%A Chen Kun-Ji
%A <br>陈谷然
%A 宋超
%A 徐骏
%A 王旦清
%A 徐岭
%A 马忠元
%A 李伟
%A 黄信凡
%A 陈坤基
%J 物理学报
%D 2010
%I 
%X Laser crystallization of amorphous Si thin films is one of reliable method of preparing nanocrystalline silicon with high density and controllable size. In the present work, molecular dynamics simulation based on Tersoff potential was used to study the laser crystallization process of ultrathin amorphous silicon film (2.7 nm) on amorphous silicon nitride substrate. The influence of laser fluences on the crystallization and formation of nanocrystalline Si was investigated. It was found that there exists a laser fluence window in which nucleation and growth of nanocrystalline Si can be realized, which is in agreement with our previous experimental observations. The nucleation and growth processes in microscopic scale were simulated and the size of formed nanocrystalline Si was limited in both vertical and lateral directions by the film thickness and the formation of grain boundaries.
%K amorphous silicon
%K molecular dynamics
%K pulsed laser crystallization<br>非晶硅
%K 分子动力学
%K 脉冲激光晶化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=ABA9597402295A1C17F59D8F15C58F6B&yid=140ECF96957D60B2&vid=6AC2A205FBB0EF23&iid=5D311CA918CA9A03&sid=BB2866B29EA3627C&eid=1F6ED07225E97640&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20