%0 Journal Article
%T High mobility polymer thin-film transistors<br>高迁移率聚合物薄膜晶体管
%A Liu Yu-Rong
%A Wang Zhi-Xin
%A Yu Jia-Le
%A Xu Hai-Hong
%A <br>刘玉荣
%A 王智欣
%A 虞佳乐
%A 徐海红
%J 物理学报
%D 2009
%I 
%X Polymer-based thin film transistors (PTFTs) were successfully fabricated on silicon substrates which was used as gate electrode, thermal silicon dioxide was used as gate insulators and poly(3-hexylthiophene) as semiconducting active layers for the transistors. The fabrication and measurement of the devices were all performed in the clean air. The PTFTs with a surface modified gate insulator show better electric characteristics with the field-effect mobility of 0.02 cm~2//(Vs) and the on/off ratio higher than 10~5 .
%K polymer thin-film transistor
%K poly(3-hexylthiophene)
%K field-effect mobility
%K surface modification<br>聚合物薄膜晶体管
%K 聚三己基噻吩
%K 场效应迁移率
%K 表面修饰
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5875A9CD5705B3263741CE274A217FF0&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=59906B3B2830C2C5&sid=56B251905F24EE31&eid=8D20A4FB735844CA&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0