%0 Journal Article
%T Properties of p-type GaN etched by inductively coupled plasma and their improvement<br>感应耦合等离子体刻蚀p-GaN的表面特性
%A Gong Xin
%A Hao Yue
%A <br>吕玲
%A 龚欣
%A 郝跃
%A Lü Ling
%A Gong Xin
%A Hao Yue
%J 物理学报
%D 2008
%I 
%X Our preseut research was focused on the surface properies of the p-type gallium nitride (p-GaN) etched by inductively coupled plasma (ICP). Different methods were used to process the etched surface. The surface condition was investigated by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The current voltage measurement was used to show the I-V characteristics of Ni/Au contacts on the sample. The experimental result demonstrated that the NaOH treatment is effective in improving the material surface and the ohmic contact properties.
%K GaN
%K inductively coupled plasma etching
%K surface treatments
%K ohmic contact<br>GaN，
%K 感应耦合等离子刻蚀，
%K 表面处理，
%K 欧姆接触
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=CCA0C049AD7091A674DAC1B453A2742D&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=0B39A22176CE99FB&sid=A91C28383511878F&eid=9D30FB531DC548C0&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=14