%0 Journal Article
%T Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films<br>氮分压对氮化铜薄膜结构及光学带隙的影响
%A Xiao Jian-Rong
%A Xu Hui
%A Li Yan-Feng
%A Li Ming-Jun
%A <br>肖剑荣
%A 徐 慧
%A 李燕峰
%A 李明君
%J 物理学报
%D 2007
%I 
%X Copper nitride(Cu_3N)thin films were deposited on glass substrates by reactive radio frequency magnetron sputtering under different radio frequency power(P)and nitrogen partial pressure r(r=N_2/N_2 Ar]).The thickness,crystalline structure and surface morphology of films were characterized by profilometer,X-ray diffraction(XRD)and atomic force microscopy(AFM),respectively.The optical transmission spectrum was obtained by an ultraviolet-visible(UV-VIS)spectrophotometer and the optical band gap(E_g)was calculated.The results suggest that the films' deposition rate increases with P and r.The surface of the films reveals a compact structure,and the grain size of Cu_3N is about 30nm.Meanwhile,with increasing r,the grain size and optical band gap of Cu_3N increase,of which E_g ranges from 1.47 to 1.82eV,and the films' growth prefers the(111)direction at low r and the(100)direction at high r.
%K copper nitride thin films
%K reactive radio frequency magnetron sputtering
%K crystal structure
%K optical band gap<br>氮化铜薄膜
%K 反应射频磁控溅射
%K 晶体结构
%K 光学带隙
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7F87E75927B32F67&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=DF92D298D3FF1E6E&sid=58595ADAC638EF5D&eid=78040EB2472903C3&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=20