%0 Journal Article
%T Deposition of P-type no-SiC:H thin films with subtle carbon incorporation for applications in p-i-n solar cells<br>微量掺碳nc-SiC:H薄膜用于p-i-n太阳电池的窗口层
%A Xu Ying
%A Diao Hong-Wei
%A Zhang Shi-Bin
%A Li Xu-Dong
%A Zeng Xiang-Bo
%A Wang Wen-Jing
%A Liao Xian-Bo
%A <br>许颖
%A 刁宏伟
%A 张世斌
%A 励旭东
%A 曾湘波
%A 王文静
%A 廖显伯
%J 物理学报
%D 2007
%I 
%X This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC:H thin film with optical gap of 1.92eV and activation energy of 0.06eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC:H /a-Si:H solar cells have been successfully prepared with a V_ oc of 0.94eV.
%K Infrared absorption spectra
%K optical band gap
%K nanocrystalline silicon films
%K solar cells<br>光学带隙
%K 纳米硅
%K 薄膜
%K 太阳能电池
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=4F502706DAD5B73F&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=94C357A881DFC066&sid=9C82A39CCA5622D4&eid=C134264DB13A76BD&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=8