%0 Journal Article
%T 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric<br>高k介质异质栅全耗尽SOI MOSFET二维解析模型
%A Luan Su-Zhen
%A Liu Hong-Xi
%A Jia Ren-Xu
%A Cai Nai-Qiong
%A <br>栾苏珍
%A 刘红侠
%A 贾仁需
%A 蔡乃琼
%J 物理学报
%D 2008
%I 
%X A 2-D analytical model for the surface potential and threshold voltage in fully depleted dual-material gate(DMG) SOI MOSFETs with high-k dielectric is developed to investigate the short-channel effects(SCEs). Our model takes into account the effects of the length of the gate metals and their work functions, the applied drain biase,and the gate dielectric constant. We demonstrate that the surface potential in the channel region exhibits a stepped potential variation by the gate near the drain, resulting in suppressed SCEs. With dielectric constants increasing, this novel device shows inverse SCEs. The derived analytical models are in good agreement with the resafts of the two-dimensional device simulator ISE.
%K dual-material gate
%K silicon-on-insulator
%K threshold volatage
%K analytical model<br>异质栅，
%K 绝缘衬底上的硅，
%K 阈值电压，
%K 解析模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=5B936FF1253AD252196D132DC85C38AA&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=B31275AF3241DB2D&sid=DAAF17374C0CF8EA&eid=1994F742B07D17CA&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0