%0 Journal Article
%T Ultraviolet light emitting diode based on ZnO nanowires<br>基于氧化锌纳米线的紫外发光二极管
%A Sun Hui
%A Zhang Qi-Feng
%A Wu Jin-Lei
%A <br>孙 晖
%A 张琦锋
%A 吴锦雷
%J 物理学报
%D 2007
%I 
%X The ultraviolet light emitting diode based on n-ZnO-nanowire/p-Si heterojunction was fabricated. Quasi-arrays of ZnO nanowires were grown on p-Si substrates using a simple low-temperature hydrothermal method that would be easily extended to mass production. As-grown ZnO nanowires showed good crystallinity, a preferable c axial orientation, and strong ultraviolet emission under optical excitation. Different kinds of cathodes were made to form the electrical contact. The I-V characteristics were diode-like. Under forward bias, the heterojunction diode emitted strong ultraviolet light at 387-nm and weaker green light.
%K ZnO nanowires
%K heterojunction
%K electroluminescence
%K hydrothermal method<br>ZnO纳米线
%K 异质结
%K 电致发光
%K 水热法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=41999E19CFE9FB1F&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=B31275AF3241DB2D&sid=908B618FE694C562&eid=77FE3BB15B11BA32&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=18