%0 Journal Article
%T Thermal stability of structure and properties of CHx doped SiCOH low dielectric constant films<br>CHx掺杂SiCOH 低介电常数薄膜的物性热稳定性分析
%A Du Jie
%A Ye Chao
%A Yu Xiao-Zhu
%A Zhang Hai-Yan
%A Ning Zhao-Yuan
%A <br>杜杰
%A 叶超
%A 俞笑竹
%A 张海燕
%A 宁兆元
%J 物理学报
%D 2009
%I 
%X This paper investigates the effect of vacuum thermal treatment on current-voltage (I-V) and capacitance-voltage (C-V) characteristics, hydrophobic properties and microstructure of CH4 doped SiCOH low dielectric constant films deposited by decamethylcyclopentasiloxane (D5) electron cyclotron resonance plasma. The results show that the desorption of thermally unstable CHx groups during the heat treatment can lead to the decrease of leakage current, the variation of SiCOH/Si interface state and the decrease of surface roughness. However, the desorption of CHx groups also leads to the deterioration of hydrophobic property.
%K SiCOH films
%K thermal treatment
%K structure and property<br>SiCOH薄膜，
%K 热处理，
%K 结构与性能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=61190238B58647365F7576B3DF80DA48&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=CA4FD0336C81A37A&sid=E406B4E9A1BA9D8C&eid=57EA20F731155703&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0