%0 Journal Article
%T Research of breakdown characteristic of InP composite channel HEMT
磷化铟复合沟道高电子迁移率晶体管击穿特性研究
%A Li Xiao
%A Zhang Hai-Ying
%A Yin Jun-Jian
%A Liu Liang
%A Xu Jing-Bo
%A Li Ming
%A Ye Tian-Chun
%A Gong Min
%A
李 潇
%A 张海英
%A 尹军舰
%A 刘 亮
%A 徐静波
%A 黎 明
%A 叶甜春
%A 龚 敏
%J 物理学报
%D 2007
%I
%X Density gradient quantum model has been used to analyse the breakdown characteristic of InP-based composite channel HEMT(high electron mobility transistor). The collision ionization in composite channel and quantum effect has been taken into consideration. We payed great attention to the relationship of on-state breakdown voltage with respect to the thickness of In0.7Ga0.3As channel, and promoted a method to enhance the on-state breakdown voltage. A commercial 2D-device simulation program. Sentaurus has been used to simulate the on-state breakdown voltage of the device. A comparison has been made between the result of simulated and measured data. The result shows that with the reduction of the thickness of In0.7Ga0.3As channel, on-state breakdown voltage of the device will be enhanced greatly without reducing saturation current, which has a significant meaning for promoting the power performance of InP-based HEMT.
%K InP
%K high electron mobility transistor
%K density gradient model
%K breakdown
磷化铟
%K 高电子迁移率晶体管
%K 密度梯度模型
%K 击穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=6FEAC5F42E24B9EB&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=DF92D298D3FF1E6E&sid=E8726D4B90AF106C&eid=A8813D0561007999&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=9