%0 Journal Article %T Research of breakdown characteristic of InP composite channel HEMT
磷化铟复合沟道高电子迁移率晶体管击穿特性研究 %A Li Xiao %A Zhang Hai-Ying %A Yin Jun-Jian %A Liu Liang %A Xu Jing-Bo %A Li Ming %A Ye Tian-Chun %A Gong Min %A
李 潇 %A 张海英 %A 尹军舰 %A 刘 亮 %A 徐静波 %A 黎 明 %A 叶甜春 %A 龚 敏 %J 物理学报 %D 2007 %I %X Density gradient quantum model has been used to analyse the breakdown characteristic of InP-based composite channel HEMT(high electron mobility transistor). The collision ionization in composite channel and quantum effect has been taken into consideration. We payed great attention to the relationship of on-state breakdown voltage with respect to the thickness of In0.7Ga0.3As channel, and promoted a method to enhance the on-state breakdown voltage. A commercial 2D-device simulation program. Sentaurus has been used to simulate the on-state breakdown voltage of the device. A comparison has been made between the result of simulated and measured data. The result shows that with the reduction of the thickness of In0.7Ga0.3As channel, on-state breakdown voltage of the device will be enhanced greatly without reducing saturation current, which has a significant meaning for promoting the power performance of InP-based HEMT. %K InP %K high electron mobility transistor %K density gradient model %K breakdown
磷化铟 %K 高电子迁移率晶体管 %K 密度梯度模型 %K 击穿 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=6FEAC5F42E24B9EB&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=DF92D298D3FF1E6E&sid=E8726D4B90AF106C&eid=A8813D0561007999&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=9