%0 Journal Article
%T MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector<br>用于紫外探测器DBR结构的高质量AlGaN材料MOCVD生长及其特性研究
%A Xie Zi-Li
%A Zhang Rong
%A Xiu Xiang-Qian
%A Han Ping
%A Liu Bin
%A Chen Lin
%A Yu Hui-Qiang
%A Jiang Ruo-Lian
%A Shi Yi
%A Zheng You-Dou
%A <br>谢自力
%A 张 荣
%A 修向前
%A 韩 平
%A 刘 斌
%A 陈 琳
%A 俞慧强
%A 江若琏
%A 施 毅
%A 郑有炓
%J 物理学报
%D 2007
%I 
%X High quality AlGaN materials used in the DBR structure of ultraviolet detector are grown under different growth conditions. The structure, composition and photographic characteristics are determined by XRD, SEM and AFM. The influence of the growth conditions on the characteristics of the AlGaN materials are discussed.The good performance of the DBR structure of ultraviolet detector is obtained.
%K AlGaN
%K DBR
%K MOCVD<br>紫外探测器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1A7F80CA21754FB41F1E4B3D1A887B24&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=708DD6B15D2464E8&sid=B8B30671F5A4D72B&eid=462D2F5200C1941A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=8