%0 Journal Article
%T Characterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements<br>基于I-V-T和C-V-T的GaN上Ni/Au肖特基接触特性研究
%A Liu Jie
%A Hao Yue
%A Feng Qian
%A Wang Chong
%A Zhang Jin-Cheng
%A Guo Liang-Liang
%A <br>刘 杰
%A 郝 跃
%A 冯 倩
%A 王 冲
%A 张进城
%A 郭亮良
%J 物理学报
%D 2007
%I 
%X Based on the temperature-dependent current-voltage (I-V-T) measurements and the temperature-dependent capacitance-voltage (C-V-T) measurements of Schottky diodes fabricated on n-type GaN,the mechanism of the electrical current transport was discussed using thin surface barrier (TSB) model. The experiment results indicated that there are different mechanisms at different temperatures and bias. Based on this assumption we give a modified I-V characteristic formula which gives excellent fit to the experiment data. The SBHs determined from high-temperature I-V curves,low-temperature C-V curves,and the metal work function agree well each other.
%K GaN
%K Schottky diode
%K thin surface barrier model
%K thermion field emission<br>氮化镓，
%K 肖特基二极管，
%K 表面势垒减薄模型，
%K 热电子场发射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=2C11F7D46A85933E&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=B31275AF3241DB2D&sid=D816C28950CAE1B7&eid=8EF69FD4AAE44AD1&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=13