%0 Journal Article
%T Thickness and optical constant determination of hydrogenated amorphous silicon thin film from transmittance spectra of ellipsometer<br>椭偏透射法测量氢化非晶硅薄膜厚度和光学参数
%A Liao Nai-Man
%A Li Wei
%A Jiang Ya-Dong
%A Kuang Yue-Jun
%A Qi Kang-Cheng
%A Li Shi-Bin
%A Wu Zhi-Ming
%A <br>廖乃镘
%A 李伟
%A 蒋亚东
%A 匡跃军
%A 祁康成
%A 李世彬
%A 吴志明
%J 物理学报
%D 2008
%I 
%X To cope with the problem that the thickness and optical constants of thin film can not be measured accurately when deposited on a transparent substrate due to the incoherent reflected-light from the back-side of the substrate, a method is presented to determine the thickness and optical constants of hydrogenated amorphous silicon (a-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) from the transmittance spectra of ellipsometer only. The influence of the substrate temperature (Ts) and the gas temperature (Tg) before glow discharge on the thickness and optical constants of a-Si:H thin films is analysed. The results show that the thickness of a-Si:H thin films determined by transmittance spectra agrees well with that measured by scanning electron microscopy (SEM). The optical constants of the films deduced from the transmittance spectra accord with the results obtained by other researchers. This method can be applied in deposition of amorphous or polycrystal thin films on transparent substrates.
%K ellipsometry
%K transmittance
%K optical constants
%K hydrogenated amorphous silicon thin films<br>椭偏测量，
%K 透射法，
%K 光学参数，
%K 氢化非晶硅薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3B4F684E75FB04E34210A99B0C4C8897&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=38B194292C032A66&sid=111DC5BD3401BA43&eid=D9E4B4338A9AF29A&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=17