%0 Journal Article
%T Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property<br>磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响
%A Zhao You-Wen
%A Miao Shan-Shan
%A Dong Zhi-Yuan
%A Deng Ai-Hong
%A Yang Jun
%A Wang Bo
%A <br>赵有文
%A 苗杉杉
%A 董志远
%A 吕小红
%A 邓爱红
%A 杨俊
%A 王博
%A Zhao You-Wen
%A Miao Shan-Shan
%A Dong Zhi-Yuan
%A Lü Xiao-Hong
%A Deng Ai-Hong
%A Yang Jun
%A Wang Bo
%J 物理学报
%D 2007
%I 
%X As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance material after high temperature annealing. Defects in the InP materials have been studied by conventional Hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and X-ray diffraction respectively. The results indicate that Fe atoms in the InP material change from the substitutional to the interstitial sites under thermal activation. Consequently, the InP material loses its deep compensation centers which results in the change in types of conduction. The mechanism and cause of the phenomena have been analyzed through comparison of the sites of Fe atom occupation and activation in doping, diffusion and ion implantation processes of InP.
%K indium phosphide
%K Fe activation
%K annealing
%K semi-insulating<br>磷化铟
%K 铁激活
%K 退火
%K 半绝缘
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=8135E47F4464ACDE&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=9CF7A0430CBB2DFD&sid=1F7B580E1844250D&eid=4D2A443A68108C38&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=28