%0 Journal Article
%T Competition between band filling effect and band-gap renormalization effect in GaAs<br>GaAs中带填充效应与带隙重整化效应的竞争
%A Teng Li-Hua
%A Wang Xia
%A Lai Tian-Shu
%A <br>滕利华
%A 王霞
%A 赖天树
%J 物理学报
%D 2011
%I 
%X Time-resolved linearly polarized pump-probe spectroscopy is used to investigate carrier relaxation dynamics in instrinsic GaAs. Absorption saturation and absorption enhancement are observed. It is found that the absorption saturation can be observed obviously when the photon energy is smaller than 1.549eV, otherwise, the absorption enhancement can be observed at a carrier density of 2×1017 cm-3. When the carrier density is above 7×1016 cm-3, the absorption enhancement increases rather than decreases with delay time. The simulation results with consideration of the competition between band filling effect and band-gap renormalization effect are in good agreement with our experimental results. With the band filling effect and band-gap renormalization effect considered, we develop a new analytical model to retrieve the carrier lifetime.
%K femtosecond pump-probe spectroscopy
%K band filling effect
%K band-gap renormalization effect
%K carrier lifetime<br>飞秒抽运-探测光谱
%K 带填充效应
%K 带隙重整化效应
%K 载流子寿命
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=C8F540FEB0EC1A9A991A86FDB26AD6FB&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=E158A972A605785F&sid=1A0C7C60D40EFD74&eid=C7B13290323C226E&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=26