%0 Journal Article
%T Noise as a characteriscic for current transmitting rate of optoelectronic coupled devices for ionization radiation damage<br>光电耦合器电离辐射损伤电流传输比1/f噪声表征
%A Lin Li-Yan
%A Du Lei
%A Bao Jun-Lin
%A He Liang
%A <br>林丽艳
%A 杜磊
%A 包军林
%A 何亮
%J 物理学报
%D 2011
%I 
%X Based on the mechanism of ionization radiation damage in optoelectronic coupled devices (OCDs), the characteristic models of current transmitting rate (CTR) and 1/f noise are established. The results show that CTR degradation and noise increase are due to the increase of SiO2/Si interface defects at the collector junction and emit junction in phototransistor. The relationship between CTR degradation and noise change is established by the radiation dose. The correctnesses of characteristic models are validated in experiment. By the relationship between noise change and radiation dose, the high-dose radiation degradation can be predicted through the low-dose irradiation experiment. So noise can be used to evaluate the radiation tolerance of OCDs.
%K 1/f noise
%K OCDs
%K defect
%K model<br>1/f噪声
%K 光电耦合器
%K 缺陷
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=34BF7AEC190908539DE8108B3D326855&yid=9377ED8094509821&vid=BFE7933E5EEA150D&iid=E158A972A605785F&sid=5568599C60D4BE87&eid=D9D6C3CD78BED2C5&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=25