%0 Journal Article
%T Influence of boron on the properties of intrinsic microcrystalline silicon thin films<br>硼对沉积本征微晶硅薄膜特性的影响
%A Sun Fu-He
%A Zhang Xiao-Dan
%A Wang Guang-Hong
%A Xu Sheng-Zhi
%A Yue Qiang
%A Wei Chang-Chun
%A Sun Jian
%A Geng Xin-Hu
%A Xiong Shao-Zhen
%A Zhao Ying
%A <br>孙福河
%A 张晓丹
%A 王光红
%A 许盛之
%A 岳强
%A 魏长春
%A 孙建
%A 耿新华
%A 熊绍珍
%A 赵颖
%J 物理学报
%D 2009
%I 
%X A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in a single-chamber under different boron-contamination conditions. The influence of boron on the properties of intrinsic microcrystalline silicon thin film was studied. The results show that the dark conductivity decreases with the increase of boron contamination and the photosensitivity shows the opposite change. The activation energy varies due to different degrees of boron contamination on these thin films. The boron contamination decreases the crystalline volume fraction and weakens the (220) prefered orientation intensity. However, the effect of contamination is less serious to the material, prepared at relatively high power and high hydrogen dilution, which has higher crystalline volume fraction and stronger (220) preferred orientation.
%K single-chamber
%K VHF-PECVD
%K microcrystalline silicon
%K boron<br>单室，
%K 甚高频等离子体增强化学气相沉积，
%K 微晶硅，
%K 硼
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=217BB178205752DC5E46DF6731CBCA3C&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=0B39A22176CE99FB&sid=B593C98A8D813A42&eid=F8085F090F1A1511&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=16