%0 Journal Article
%T The electron emission yield induced by the interaction of highly charged argon ions with silicon surface<br>高电荷态离子40Arq+与Si表面作用中的电子发射产额
%A Zhao Yong-Tao
%A Xiao Guo-Qing
%A Xu Zhong-Feng
%A Abdul Qayyum
%A Wang Yu-Yu
%A Zhang Xiao-An
%A Li Fu-Li
%A Zhan Wen-Long
%A <br>赵永涛
%A 肖国青
%A 徐忠锋
%A Abdul Qayyum
%A 王瑜玉
%A 张小安
%A 李福利
%A 詹文龙
%J 物理学报
%D 2007
%I 
%X The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission,namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.
%K highly charged ions (HCI)
%K potential energy deposition
%K electronic energy loss
%K the electron yield per ion<br>高电荷态离子
%K 势能沉积
%K 势能沉积
%K 电子能损
%K 单离子产额
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=68B04DC006AC8F35&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=F3090AE9B60B7ED1&sid=04B7EBBCAB10A836&eid=FEAF212B71B8195F&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=9