%0 Journal Article
%T Effect of boron doping on the electrical conduction of tetrahedral amorphous carbon films<br>硼掺杂对四面体非晶碳膜电导性能的影响
%A Tan Man-Lin
%A Zhu Jia-Qi
%A Zhang Hua-Yu
%A Zhu Zhen-Ye
%A Han Jie-Cai
%A <br>檀满林
%A 朱嘉琦
%A 张化宇
%A 朱振业
%A 韩杰才
%J 物理学报
%D 2008
%I 
%X Boron doped tetrahedral amorphous carbon films were prepared on a filtered cathodic vacuum arc deposition system by varying the weight percentage of boron in the mixed graphite cathodes. The electrical conductivity versus temperature, I-V characteristic and C-V characteristic for the films were measured by four-probe method, impedance/gain-phase analyzer, and electrochemical interface, respectively. As the boron content increases from 0 to 6.04 at%, the electrical conductivity of the films at room temperature increases gradually and then drops down, while the activation energy varies in the reverse. At the boron content of 2.13 at%, a maximum value of 1.42×10-7 S/cm and a minimum value of 0.1eV were obtained for the above two parameters, respectively. Furthermore, the rectification characteristics in the I-V curve indicated a p-n junction diode was formed for the boron doped tetrahedral amorphous carbon/n-type silicon heterojunction with uniform doping levels in the space at the two ends of the junction.
%K tetrahedral amorphous carbon
%K electrical conductivity
%K I-V curve
%K C-V curve<br>四面体非晶碳
%K 电导率
%K I-V曲线
%K C-V曲线
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=62226F86659EDE70D20B4054C66188A7&yid=67289AFF6305E306&vid=11B4E5CC8CDD3201&iid=F3090AE9B60B7ED1&sid=954BBDBD1E7E25F8&eid=9A6946E3D7FC42C2&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=0