%0 Journal Article
%T Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET''''s<br>超薄栅下LDD nMOSFET器件GIDL应力下退化特性
%A Chen Hai-Feng
%A Hao Yue
%A Ma Xiao-Hu
%A Tang Yu
%A Meng Zhi-Qin
%A Cao Yan-Rong
%A Zhou Peng-Ju
%A <br>陈海峰
%A 郝 跃
%A 马晓华
%A 唐 瑜
%A 孟志琴
%A 曹艳荣
%A 周鹏举
%J 物理学报
%D 2007
%I 
%X The threshold voltage(V_ TH)degradation have been investigated under GIDL(gate induced drain leakage)stresse in LDD nMOSFET with 1.4 nm-thick gate oxide.The trapped holes and interface states generated in the stress process at interface around LDD overlapping region result in the increase in V_ TH.The logarithm of V_ TH degradation after GIDL stresses at constant V_ DG is proportional to the ratio of V_D/V_ DG.The V_ TH degradation after GIDL stresses at constant V_D increases with increasing V_G in the stress,and that after GIDL stresses at constant V_G increases with increasing V_D in the stress In the last two cases the V_ TH degradation is always linear with the reciprocal of the bias which changes in the stress,and the absolute values of degradation slopes are 0.76 and 13.5,respectively.Experimental result shows that the degradation depends more strongly on V_D than on V_G.
%K CMOS<br>栅致漏极泄漏
%K 阈值电压
%K 栅漏电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=7A382E6FE6915BA4&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=38B194292C032A66&sid=3DE6111EA92D7986&eid=0D3639620E137999&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=16