%0 Journal Article
%T Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth<br>氢稀释对高速生长纳米晶硅薄膜晶化特性的影响
%A Qiu Sheng-Hu
%A Chen Cheng-Zhao
%A Liu Cui-Qing
%A Wu Yuan-Dan
%A Li Ping
%A Lin Xuan-Ying
%A Huang Chong
%A Yu Chu-Ying
%A <br>邱胜桦
%A 陈城钊
%A 刘翠青
%A 吴燕丹
%A 李平
%A 林璇英
%A 黄翀
%A 余楚迎
%J 物理学报
%D 2009
%I 
%X Nano-crystalline silicon films were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at a pressure of 230 Pa. The effect of hydrogen dilution on their growth rate and crystalline properties were investigated. The experimental results indicate that the crystalline fraction and grain size increase with increasing hydrogen dilution ratio, and when the hydrogen dilution ratio increases to 99%, the crystalline fraction reaches 70%. The deposition rate decreases with increasing hydrogen dilution ratio, when the hydrogen dilution ratio decreases from 99% to 95%, the deposition rate of thin film increases from 0.3nm/s to 0.8nm/s.
%K 纳米晶硅薄膜，
%K 氢稀释，
%K 晶化率，
%K 硅烷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=3EFA4C68D76036F1A18E47CCC2BD0C59&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=CA4FD0336C81A37A&sid=90075EB19043D533&eid=1FA4E9C3E6E88FC8&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=14