%0 Journal Article
%T Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells<br>CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究
%A Li Bing
%A Liu Cai
%A Feng Liang-Huan
%A Zhang Jing-Quan
%A Zheng Jia-Gui
%A Cai Ya-Ping
%A Cai Wei
%A Wu Li-Li
%A Li Wei
%A Lei Zhi
%A Zeng Guang-Gen
%A Xia Geng-Pei
%A <br>黎兵
%A 刘才
%A 冯良桓
%A 张静全
%A 郑家贵
%A 蔡亚平
%A 蔡伟
%A 武莉莉
%A 李卫
%A 雷智
%A 曾广根
%A 夏庚培
%J 物理学报
%D 2009
%I 
%X Impurities and deep levels in CdS/CdTe thin film solar cells with no back-contact layer were studied by deep level transient spectroscopy and photoluminescence. They could lower the device performance notably. Distribution of net carrier concentration was obtained. Two deep levels at Ev+0.365 eV and Ev+0.282 eV were determined with concentration of 1.67×1012 cm-3 and 3.86×1011 cm-3, respectively, and with capture cross section of 1.43×10-14 cm2 and 1.53×10-16 cm2, respectively. They are attributed to chemical impurities like Au and/or a singly charged tellurium vacancy complex, or related to O atoms introduced by the deposition of CdTe in O2 and Ar ambient.
%K deep level transient spectroscopy
%K photoluminesence
%K CdTe solar cells<br>深能级瞬态谱，
%K 光致发光，
%K CdS/CdTe太阳电池
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=D296B1A46C0085F2312DA691F8AA930B&yid=DE12191FBD62783C&vid=9FFCC7AF50CAEBF7&iid=38B194292C032A66&sid=9C2DB0A0D5ABE6F8&eid=116CB34717B0B183&journal_id=1000-3290&journal_name=物理学报&referenced_num=1&reference_num=0