%0 Journal Article
%T Band gap Narrowing in heavily B doped Si1-xGex strained layers<br>重掺B对应变SiGe材料能带结构的影响
%A Yao Fei
%A Xue Chun-Lai
%A Cheng Bu-Wen
%A Wang Qi-Ming
%A <br>姚飞
%A 薛春来
%A 成步文
%A 王启明
%J 物理学报
%D 2007
%I 
%X This paper presents a comprehensive study of the effect of heavy B doping and strain in Si1-xGex strained layers. On the one hand, bandgap narrowing (BGN) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of SiGe materials, thus will compensate for part of the strain. Taking the strain compensation of B into account for the first time and uesing the with semi-empirical method, the Jain-Roulston model is modified. And the real BGN distributed between the conduction and valence bands is calculated, which is important for the accurate design of SiGe HBTs.
%K SiGe layer
%K strain
%K band gap narrowing
%K Jain-Roulston model<br>SiGe材料
%K 应变
%K 带隙收缩(BGN)
%K Jain-Roulston模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=29DF2CB55EF687E7EFA80DFD4B978260&aid=1A7F80CA21754FB4CFC3E7A349E665D8&yid=A732AF04DDA03BB3&vid=014B591DF029732F&iid=708DD6B15D2464E8&sid=BA1310A6BBBF7DB2&eid=551B25C18E1D631A&journal_id=1000-3290&journal_name=物理学报&referenced_num=0&reference_num=13